In the context of this visit, the renowned physicist from the Russian Academy University participated in an agreement between St. Petersburg Academic University – nanotechnology research and education center of Russian Academy of Sciences and RIBER concerning the creation and management of the "Alferov-Riber MBE Academy" Center of Excellence.

Zhores Ivanovich Alferov is a Russian physicist and academic who has contributed significantly to the creation of modern heterostructure physics and electronics. Since 1962, he has been working on semiconductor heterostructures. His contributions to semiconductor heterostructure physics and technology, including investigations of injection properties, development of lasers, solar cells, LEDs and epitaxy processes, have led to the creation of modern heterostructure physics and electronics. He received the 2000 Nobel Prize in Physics for developing semiconductor heterostructures used in high-speed- and optoelectronics.

With a view to further promoting basic research in the field of semiconductor physics and the effective use of RIBER’s MBE (Molecular Beam Epitaxy) systems, the Russian Academy of Sciences and RIBER have agreed to jointly create a Center of Excellence located on the premises of the Academic University in St. Petersburg, Russia.

Combining the Academic University’s scientific and pedagogical capabilities and RIBER’s experience in MBE system design and use, the Academic University and RIBER will:

• Design and implement a graduate course for Academic University students, aiming to teach the use of MBE technology for research and the manufacturing of new nanotechnology devices

• Design and implement a basic training course aimed at technicians and engineers worldwide who will operate MBE systems.

Following the Rusnanoprize awarded to RIBER by the Russian Nanotechnology Society in 2009, this initiative confirms RIBER’s reputation in Russia and will enable the group to further develop its key technology.

News source: COMPOUNDSEMICONDUCTOR
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